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HYB5118165BJ-60 - 1M x 16-Bit Dynamic RAM 1k & 4k Refresh

Description

N.C.

Features

  • include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116165BJ-50 HYB 5116165BJ-60 HYB 5116165BJ-70 HYB 5118165BJ-50 HYB 5118165BJ-60 HYB 5118165BJ-70 Pin Names A0-A9 A0-A9 A0-A11 A0 to A7 RAS OE I/O1-I/O16 UCAS LCAS WE Row Address Inputs for HYB5118165BSJ Column Address Inputs for HYB5118165BSJ Row Address Inputs for HYB5116165BSJ Column Address Inputs for HYB5116165BSJ Row Address Strobe O.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB5118165BJ-50 1M x 16-Bit Dynamic RAM 1k & 4k Refresh
HYB5118165BJ-70 1M x 16-Bit Dynamic RAM 1k & 4k Refresh
HYB5118165BSJ-50 1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118165BSJ-60 1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118165BST-50 1M x 16-Bit Dynamic RAM 1k Refresh

Full PDF Text Transcription

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1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO) Advanced Information • • • HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns • • • • • • • • • Single + 5 V (± 10 %) supply Low power dissipation max. 1100 active mW ( HYB5118165BSJ-50) max. 990 active mW ( HYB5118165BSJ-60) max. 880 active mW ( HYB5118165BSJ-70) max. 550 active mW ( HYB5116165BSJ-50) max. 495 active mW ( HYB5116165BSJ-60) max. 440 active mW ( HYB5116165BSJ-70) 11 mW standby (TTL) 5.5.
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