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HYB5118160BSJ-60 - 1M x 16-Bit Dynamic RAM

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N.C.

V CC I/O1 I/O2 I/O3 I/O4 V CC I/O5 I/O6 I/O7 I/O8 N.C.

N.C.

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1M × 16-Bit Dynamic RAM 1k Refresh (Fast Page Mode) Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50 -60 60 15 30 104 40 ns ns ns ns ns HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 84 35 • Power Dissipation, Refresh & Addressing: HYB5118160 -50 Power Supply Addressing Refresh Active TTL Standby CMOS Standby 715 11 5.5 -60 5 V ± 10 % 10/10 632 HYB3118160 -50 -60 3.3 V ± 0.3 V 10/10 468 7.2 3.
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