Q62702-B0862 - Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)

Siemens Semiconductor Group (now Infineon)

Q62702-B0862 silicon tuning diode (high q hyperabrupt tuning diode designed for low tuning voltage operation) by Siemens Semiconductor Group (now Infineon) - Datasheet Preview

Datasheet Details

Part number	Q62702-B0862
Manufacturer	Siemens Semiconductor Group (now Infineon)
File Size	12.47 KB
Description	Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
Datasheet	Q62702-B0862 Datasheet

Full PDF Text Transcription for Q62702-B0862 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for Q62702-B0862. For precise diagrams, and layout, please refer to the original PDF.

BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipmen...

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w tuning voltage operation for VCO’s in mobile communications equipment • High ratio at low reverse voltage 2 1 VES05991 Type BBY 53-02W Marking L Ordering Code Q62702-B0862 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 6 20 -55 ...+150 -55 ...+150 Unit V mA °C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -20-1998 BBY 53-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max.

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