Q62702-B0858 - Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance)

Siemens Semiconductor Group (now Infineon)

Datasheet Details

Part number	Q62702-B0858
Manufacturer	Siemens Semiconductor Group (now Infineon)
File Size	14.27 KB
Description	Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance)
Datasheet	Q62702-B0858 Datasheet

Full PDF Text Transcription for Q62702-B0858 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for Q62702-B0858. For precise diagrams, and layout, please refer to the original PDF.

BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobi...

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ctance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment 2 1 VES05991 Type BBY 51-02W Marking I Ordering Code Q62702-B0858 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 7 20 -55 ...+150 -55 ...+150 Unit V mA °C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Jul-23-1998 1998-11-01 BBY 51-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max.

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