Q62702-B0825 - Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)

Siemens Semiconductor Group (now Infineon)

Q62702-B0825 silicon tuning diode (high q hyperabrupt tuning diode designed for low tuning voltage operation) by Siemens Semiconductor Group (now Infineon) - Datasheet Preview

Datasheet Details

Part number	Q62702-B0825
Manufacturer	Siemens Semiconductor Group (now Infineon)
File Size	31.99 KB
Description	Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
Datasheet	Q62702-B0825 Datasheet

Full PDF Text Transcription for Q62702-B0825 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for Q62702-B0825. For precise diagrams, and layout, please refer to the original PDF.

BBY 53-03W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipmen...

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w tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type BBY 53-03W Marking Ordering Code white/5 Q62702-B0825 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 6 20 - 55 ... + 150 - 55 ... + 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Sep-11-1996 BBY 53-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max.

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