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BFY280 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

Features

  • HiRel Discrete and Microwave Semiconductor.
  • For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA.
  • Hermetically sealed microwave package.
  • fT = 7.2 GHz, F = 2.5 dB at 2 GHz.
  • qualified.
  • ESA/SCC Detail Spec. No. : 5611/006 BFY 280 Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 280 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B E Package Micro-.

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HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.
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