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BFY193 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.)

Features

  • HiRel Discrete and Microwave Semiconductor.
  • For low noise, high gain broadband amplifiers up to 2 GHz.
  • For linear broadband amplifiers.
  • Hermetically sealed microwave package.
  • fT = 8 GHz, F = 2.3 dB at 2 GHz.
  • qualified.
  • ESA/SCC Detail Spec. No. : 5611/006 BFY 193 Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 193 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B.

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HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.
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