BFY180 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
Features
HiRel Discrete and Microwave Semiconductor.
For low power amplifiers at collector currents from 0.2 to 2.5 mA.
Hermetically sealed microwave package.
fT = 6.5 GHz, F = 2.6 dB at 2 GHz.
qualified.
ESA/SCC Detail Spec. No. : 5611/006
BFY 180
Micro-X1
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 180 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B E Package Micro-X1
(ql) Qua.
HiRel NPN Silicon RF Transistor
Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.
BFY180 Datasheet
