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SDP10S120D - Silicon Carbide Power Schottky Diode

Features

  • - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage 4 Silicon Carbide SDP10S120D Product Summary VDC 1200 V IF 10 A Qc 39 nC K(4).

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Datasheet Details

Part number SDP10S120D
Manufacturer SemiSouth
File Size 195.27 KB
Description Silicon Carbide Power Schottky Diode
Datasheet download datasheet SDP10S120D Datasheet
Additional preview pages of the SDP10S120D datasheet.

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Full PDF Text Transcription

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Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage 4 Silicon Carbide SDP10S120D Product Summary VDC 1200 V IF 10 A Qc 39 nC K(4) Applications: - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive TO-247 3 2 1 A(1) A(3) K(2) Internal Schematic MAXIMUM RATINGS Parameter Symbol Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current (Per Leg / Per Device) Peak Repetitive Forward Current (Per Leg / Per Device) Non-Repetitive Forward Surge Current (Per Leg / Per Device) Power Dissipation (Per Leg / Per Device) VRRM VD
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