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SDP30S120 - Silicon Carbide Power Schottky Diode

Features

  • - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage Silicon Carbide SDP30S120 Product Summary VDC 1200 V IF 30 A Qc 130 nC K(3).

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Datasheet Details

Part number SDP30S120
Manufacturer SemiSouth
File Size 702.96 KB
Description Silicon Carbide Power Schottky Diode
Datasheet download datasheet SDP30S120 Datasheet
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Full PDF Text Transcription

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Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage Silicon Carbide SDP30S120 Product Summary VDC 1200 V IF 30 A Qc 130 nC K(3) Applications: - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive 2 Lead TO-247 MAXIMUM RATINGS Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current (1) Symbol VRRM VDC IF Peak Repetitive Forward Current (1) IFRM Conditions Tj = 25 °C TC = 145 °C TC = 100 °C TC = 125 °C, D = 0.
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