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SDP10N06 - N-Channel 650V Power MOSFET

Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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Datasheet preview – SDP10N06

Datasheet Details

Part number SDP10N06
Manufacturer VBsemi
File Size 343.29 KB
Description N-Channel 650V Power MOSFET
Datasheet download datasheet SDP10N06 Datasheet
Additional preview pages of the SDP10N06 datasheet.

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    Full PDF Text Transcription

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    SDP10N06-VB SDP10N06-VB Datasheet N-Channel 650V (D-S) Super Junction Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 43 0.
    Published: |