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HRP55N10K - 100V N-Channel Trench MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 190 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 4.5 Pȍ (Typ. ) @VGS=10V ‰ 100% Avalanche Tested Oct 2016 BVDSS = 100 V RDS(on) typ = Pȍ ID = 170 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Dra.

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Datasheet Details

Part number HRP55N10K
Manufacturer SemiHow
File Size 161.70 KB
Description 100V N-Channel Trench MOSFET
Datasheet download datasheet HRP55N10K Datasheet
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Full PDF Text Transcription

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HRP55N10K HRP55N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 190 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 4.5 Pȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested Oct 2016 BVDSS = 100 V RDS(on) typ = Pȍ ID = 170 A TO-220 1 23 1.Gate 2. Drain 3.
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