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HRP180N10K - N-Channel Trench MOSFET

Datasheet Summary

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 85 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 15 mΩ (Typ. ) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ =15 mΩ ID = 65 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current D.

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Datasheet Details

Part number HRP180N10K
Manufacturer SemiHow
File Size 886.25 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet HRP180N10K Datasheet
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Full PDF Text Transcription

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HRP180N10K HRP180N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 85 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 15 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ =15 mΩ ID = 65 A TO-220 1 2 3 1.Gate 2. Drain 3.
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