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HRP120N10K - 100V N-Channel Trench MOSFET

Datasheet Summary

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 65 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 10 mΩ (Typ. ) @VGS=10V  100% Avalanche Tested March 2015 BVDSS = 100 V RDS(on) typ = 10 mΩ ID = 73 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drai.

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Datasheet Details

Part number HRP120N10K
Manufacturer SemiHow
File Size 1.01 MB
Description 100V N-Channel Trench MOSFET
Datasheet download datasheet HRP120N10K Datasheet
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Full PDF Text Transcription

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HRP120N10K HRP120N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 65 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V  100% Avalanche Tested March 2015 BVDSS = 100 V RDS(on) typ = 10 mΩ ID = 73 A TO-220 1 23 1.Gate 2. Drain 3.
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