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HRLF80N06K - N-Channel MOSFET

Features

  • ‰ BVDSS = 60 V ‰ ID = 70 A ‰ Unrivalled Gate Charge : 100 nC (Typ. ) ‰ Lower RDS(ON) : 6.3 Pȍ (Typ. ) @VGS=10V ‰ Lower RDS(ON) : 7.5 Pȍ (Typ. ) @VGS=4.5V ‰ 100% Avalanche Tested 8DFN 5x6 1 Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25୅ TC = 100୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TC= 25୅ TA = 25୅ Operat.

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Datasheet Details

Part number HRLF80N06K
Manufacturer SemiHow
File Size 184.74 KB
Description N-Channel MOSFET
Datasheet download datasheet HRLF80N06K Datasheet

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Full PDF Text Transcription

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HRLF80N06K Jan 2016 HRLF80N06K 60V N-Channel Trench MOSFET FEATURES ‰ BVDSS = 60 V ‰ ID = 70 A ‰ Unrivalled Gate Charge : 100 nC (Typ.) ‰ Lower RDS(ON) : 6.3 Pȍ (Typ.) @VGS=10V ‰ Lower RDS(ON) : 7.5 Pȍ (Typ.) @VGS=4.5V ‰ 100% Avalanche Tested 8DFN 5x6 1 Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25୅ TC = 100୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TC= 25୅ TA = 25୅ Operating and Storage Temperature Range 60 ρ20 70 44 150 220 69 2.0 -55 to +150 Units V V A A A mJ W W ୅ Thermal Resistance Characteristics Symbol Parameter RșJC RșJA Junction-to-Case Junction-to-Ambient (steady state) Typ.
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