Datasheet4U Logo Datasheet4U.com

HRLF150N10K - N-Channel MOSFET

Features

  • ‰ BVDSS = 100 V ‰ ID = 50 A ‰ Unrivalled Gate Charge : 80 nC (Typ. ) ‰ Lower RDS(ON) : 13 Pȍ (Typ. ) @VGS=10V ‰ Lower RDS(ON) : 14 Pȍ (Typ. ) @VGS=4.5V ‰ 100% Avalanche Tested 8DFN 5x6 1 Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25୅ TC = 100୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TC= 25୅ TA = 25୅ Operatin.

📥 Download Datasheet

Datasheet preview – HRLF150N10K

Datasheet Details

Part number HRLF150N10K
Manufacturer SemiHow
File Size 228.00 KB
Description N-Channel MOSFET
Datasheet download datasheet HRLF150N10K Datasheet
Additional preview pages of the HRLF150N10K datasheet.

📁 Similar Datasheet

  • HRL0103C - Silicon Schottky Barrier Diode (Renesas Technology)
Other Datasheets by SemiHow

Full PDF Text Transcription

Click to expand full text
HRLF150N10K Jan 2016 HRLF150N10K 100V N-Channel Trench MOSFET FEATURES ‰ BVDSS = 100 V ‰ ID = 50 A ‰ Unrivalled Gate Charge : 80 nC (Typ.) ‰ Lower RDS(ON) : 13 Pȍ (Typ.) @VGS=10V ‰ Lower RDS(ON) : 14 Pȍ (Typ.) @VGS=4.5V ‰ 100% Avalanche Tested 8DFN 5x6 1 Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25୅ TC = 100୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TC= 25୅ TA = 25୅ Operating and Storage Temperature Range 100 ρ20 50 32 110 190 74 2.0 -55 to +150 Units V V A A A mJ W W ୅ Thermal Resistance Characteristics Symbol Parameter RșJC RșJA Junction-to-Case Junction-to-Ambient (steady state) Typ.
Published: |