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HRLF180N10K - N-Channel MOSFET

Features

  • ‰ BVDSS = 100 V ‰ ID = 40 A ‰ Unrivalled Gate Charge : 94 nC (Typ. ) ‰ Lower RDS(ON) : 16 Pȍ (Typ. ) @VGS=10V ‰ Lower RDS(ON) : 17 Pȍ (Typ. ) @VGS=4.5V ‰ 100% Avalanche Tested 8DFN 5x6 1 Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25୅ TC = 100୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TC= 25୅ TA = 25୅ Operatin.

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Datasheet Details

Part number HRLF180N10K
Manufacturer SemiHow
File Size 212.29 KB
Description N-Channel MOSFET
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HRLF180N10K Jan 2016 HRLF180N10K 100V N-Channel Trench MOSFET FEATURES ‰ BVDSS = 100 V ‰ ID = 40 A ‰ Unrivalled Gate Charge : 94 nC (Typ.) ‰ Lower RDS(ON) : 16 Pȍ (Typ.) @VGS=10V ‰ Lower RDS(ON) : 17 Pȍ (Typ.) @VGS=4.5V ‰ 100% Avalanche Tested 8DFN 5x6 1 Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25୅ TC = 100୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TC= 25୅ TA = 25୅ Operating and Storage Temperature Range 100 ρ20 40 25 90 110 63 2.0 -55 to +150 Units V V A A A mJ W W ୅ Thermal Resistance Characteristics Symbol Parameter RșJC RșJA Junction-to-Case Junction-to-Ambient (steady state) Typ.
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