HRF40N06K - N-Channel MOSFET

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Features

BVDSS = 60 V ID = 40 A Unrivalled Gate Charge : 40 nC (Typ. ) Lower RDS(ON) : 11.5 Pȍ (Typ. ) @VGS=10V 100% Avalanche Tested Sep 2014 8DFN 5x6 1 Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current.
Continuous (TC = 25୅).
Continuous (TC = 100୅).
Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note.

HRF40N06K n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HRF40N06K
Manufacturer	SemiHow
File Size	177.14 KB
Description	N-Channel MOSFET
Datasheet	HRF40N06K Datasheet

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HRF40N06K HRF40N06K 60V N-Channel Trench MOSFET FEATURES BVDSS = 60 V ID = 40 A Unrivalled Gate Charge : 40 nC (Typ.) Lower RDS(ON) : 11.5 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested Sep 2014 8DFN 5x6 1 Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25୅) Power Dissipation (TA = 25୅) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 60 40 28 140 ρ20 120 7.8 60 2.

Published: Apr 14, 2017 |