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HRF120N10K - N-Channel MOSFET

Features

  •  BVDSS = 100 V  ID = 73 A  Unrivalled Gate Charge : 65 nC (Typ. )  Lower RDS(ON) : 10 mΩ (Typ. ) @VGS=10V  100% Avalanche Tested December 2014 8DFN 5x6 1 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current.
  • Continuous (TC = 25℃).
  • Continuous (TC = 100℃).
  • Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (N.

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Datasheet Details

Part number HRF120N10K
Manufacturer SemiHow
File Size 886.56 KB
Description N-Channel MOSFET
Datasheet download datasheet HRF120N10K Datasheet

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Full PDF Text Transcription

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HRF120N10K HRF120N10K 100V N-Channel Trench MOSFET FEATURES  BVDSS = 100 V  ID = 73 A  Unrivalled Gate Charge : 65 nC (Typ.)  Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 8DFN 5x6 1 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25℃) Power Dissipation (TA = 25℃) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 100 73 * 51 * 200 * ±25 265 8.8 88 2.
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