HRF140N06K - N-Channel MOSFET

SemiHow

Features

 BVDSS = 60 V  ID = 40 A  Unrivalled Gate Charge : 40 nC (Typ. )  Lower RDS(ON) : 11.5 mΩ (Typ. ) @VGS=10V  100% Avalanche Tested December 2014 8DFN 5x6 1 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current.
Continuous (TC = 25℃).
Continuous (TC = 100℃).
Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (.

HRF140N06K n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HRF140N06K
Manufacturer	SemiHow
File Size	954.05 KB
Description	N-Channel MOSFET
Datasheet	HRF140N06K Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HRF22	Silicon Schottky Barrier Diode	Hitachi Semiconductor
HRF302A	Silicon Schottky Barrier Diode	Hitachi Semiconductor
HRF32	Silicon Schottky Barrier Diode	Hitachi Semiconductor
HRF3205	N-Channel MOSFET	INCHANGE
HRF3205	N-Channel MOSFET	Fairchild Semiconductor

Other Datasheets by SemiHow

Part Number	Description
HRF120N10K	N-Channel MOSFET
HRF130N06K	60V N-Channel Trench MOSFET
HRF40N06K	N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

HRF140N06K HRF140N06K 60V N-Channel Trench MOSFET FEATURES  BVDSS = 60 V  ID = 40 A  Unrivalled Gate Charge : 40 nC (Typ.)  Lower RDS(ON) : 11.5 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 8DFN 5x6 1 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25℃) Power Dissipation (TA = 25℃) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 60 40 * 28 * 140 * ±20 145 3.3 33 2.

Published: Mar 26, 2016 |