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HFW5N65U_HFI5N65U
HFW5N65U / HFI5N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested
Jan 2013
BVDSS = 650 V RDS(on) typ ȍ ID = 4.5 A
D2-PAK I2-PAK
HFW5N65U HFI5N65U 1.Gate 2. Drain 3.
HFW5N65U Datasheet
