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HFW50N06A - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 27 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : ȍ(Typ. ) @VGS=10V ‰ 100% Avalanche Tested BVDSS = 60 V RDS(on) typ = 18 Pȍ ID = 50 A D2-PAK 2 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR.

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Datasheet Details

Part number HFW50N06A
Manufacturer SemiHow
File Size 364.40 KB
Description N-Channel MOSFET
Datasheet download datasheet HFW50N06A Datasheet

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Full PDF Text Transcription

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HFW50N06A Oct 2015 HFW50N06A 60V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 27 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : ȍ(Typ.) @VGS=10V ‰ 100% Avalanche Tested BVDSS = 60 V RDS(on) typ = 18 Pȍ ID = 50 A D2-PAK 2 1 3 1.Gate 2. Drain 3.
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