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HFW5N65S - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 10.5 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D2-PAK I2-PAK HFW5N65S HFI5N65S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Vo.

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Datasheet Details

Part number HFW5N65S
Manufacturer SemiHow
File Size 176.82 KB
Description N-Channel MOSFET
Datasheet download datasheet HFW5N65S Datasheet

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Full PDF Text Transcription

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HFW5N65S_HFI5N65S Mar 2010 HFW5N65S / HFI5N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 4.2 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 10.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D2-PAK I2-PAK HFW5N65S HFI5N65S 1.Gate 2. Drain 3.
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