HFW11N40 - 400V N-Channel MOSFET

SemiHow

Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested D2-PAK 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain.

HFW11N40 400v n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFW11N40
Manufacturer	SemiHow
File Size	173.67 KB
Description	400V N-Channel MOSFET
Datasheet	HFW11N40 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HFW1230K00	Relay	CII Technology

Other Datasheets by SemiHow

Part Number	Description
HFW10N60	N-Channel MOSFET
HFW10N60S	N-Channel MOSFET
HFW10N60U	N-Channel MOSFET
HFW10N65S	N-Channel MOSFET
HFW12N60S	N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

HFW11N40 Dec 2005 HFW11N40 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ ȍ ID = 11.4 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested D2-PAK 1.Gate 2. Drain 3.

Published: Jun 7, 2015 |