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HFW10N60U - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 29 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested March 2013 BVDSS = 600 V RDS(on) typ ȍ ID = 9.5 A D2-PAK I2-PAK HFW10N60U HFI10N60U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter.

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Datasheet Details

Part number HFW10N60U
Manufacturer SemiHow
File Size 302.79 KB
Description N-Channel MOSFET
Datasheet download datasheet HFW10N60U Datasheet

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Full PDF Text Transcription

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HFW10N60U_HFI10N60U HFW10N60U / HFI10N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 29 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested March 2013 BVDSS = 600 V RDS(on) typ ȍ ID = 9.5 A D2-PAK I2-PAK HFW10N60U HFI10N60U 1.Gate 2. Drain 3.
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