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HFW12N60S - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 38 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.53 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D2-PAK 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain.

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Datasheet Details

Part number HFW12N60S
Manufacturer SemiHow
File Size 207.35 KB
Description N-Channel MOSFET
Datasheet download datasheet HFW12N60S Datasheet

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Full PDF Text Transcription

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HFW12N60S Jan 2013 HFW12N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.53 ȍ ID = 12 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 38 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.53 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D2-PAK 1.Gate 2. Drain 3.
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