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HFU2N65U - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 5.5 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 5 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested May 2014 BVDSS = 650 V RDS(on) typ = 5 ȍ ID = 1.8 A D-PAK I-PAK 2 1 3 HFD2N65U 1 2 3 HFU2N65U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Param.

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Datasheet Details

Part number HFU2N65U
Manufacturer SemiHow
File Size 403.78 KB
Description N-Channel MOSFET
Datasheet download datasheet HFU2N65U Datasheet

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Full PDF Text Transcription

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HFD2N65U_HFU2N65U HFD2N65U / HFU2N65U 650V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 5.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 5 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested May 2014 BVDSS = 650 V RDS(on) typ = 5 ȍ ID = 1.8 A D-PAK I-PAK 2 1 3 HFD2N65U 1 2 3 HFU2N65U 1.Gate 2. Drain 3.
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