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HFU2N90 - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 17 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N90 1 2 3 HFU2N90 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-.

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Datasheet Details

Part number HFU2N90
Manufacturer SemiHow
File Size 249.33 KB
Description N-Channel MOSFET
Datasheet download datasheet HFU2N90 Datasheet

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Full PDF Text Transcription

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HFD2N90_HFU2N90 Feb 2014 HFD2N90/HFU2N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ȍ ID = 2.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 17 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N90 1 2 3 HFU2N90 1.Gate 2. Drain 3.
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