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HFU2N65S - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 6.0 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 5.0 ȍ (Typ. ) @VGS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N65S 1 2 3 HFU2N65S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Dra.

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Datasheet Details

Part number HFU2N65S
Manufacturer SemiHow
File Size 260.56 KB
Description N-Channel MOSFET
Datasheet download datasheet HFU2N65S Datasheet

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Full PDF Text Transcription

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HFD2N65S_HFU2N65S Mar 2010 HFD2N65S / HFU2N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 5.0 ȍ ID = 1.6 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 6.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 5.0 ȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N65S 1 2 3 HFU2N65S 1.Gate 2. Drain 3.
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