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HFH18N50S - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 52 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.220 ȍ (Typ. ) @VGS=10V ‰ 100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

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Datasheet Details

Part number HFH18N50S
Manufacturer SemiHow
File Size 222.88 KB
Description N-Channel MOSFET
Datasheet download datasheet HFH18N50S Datasheet

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Full PDF Text Transcription

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HFH18N50S Nov 2009 HFH18N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.220ȍ ID = 19 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 52 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.220 ȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3.
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