HFH10N90Z - N-Channel MOSFET

Features

• ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant ‰ Built-in ESD Diode Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 900 10 1.0 72 HFH10N90Z TO-3P HFA10N90Z TO-247 Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-3P TO-247 VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Volt.