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HFH9N90 - N-Channel Enhancement Mode Field Effect Transistor

Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

Features

  • s.
  • 9A, 900V(See Note), RDS(on).

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Datasheet Details

Part number HFH9N90
Manufacturer HUASHAN ELECTRONIC
File Size 677.68 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet HFH9N90 Datasheet

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Full PDF Text Transcription

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Shantou Huashan Electronic Devices Co.,Ltd. HFH9N90 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. █ Features • 9A, 900V(See Note), RDS(on) <1.
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