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HDAE75F60G - Fast Recovery Diode

Description

With excellent performance in reverse recovery time, switching speed and rated current, HDAE75F60G can be utilized with high voltage power switches for voltage limitation and high-frequency current rectification.

Features

  •  High Breakdown Voltage  High Speed Switching Dec 2015 VRRM = 600 V IF = 75A trr = 43nS TO-247-2L C A Cathode Anode Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VRRM VR IF(AV) Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectifier Forward Current IFSM Non-Rectifier Peak Surge Current @8.3ms TJ, TSTG Operating and Storage Temperature Range Value 600 75 750 -55 to +150 Unit V A A ℃ Electrical Characteristics Symbol VBR VF IR trr Paramete.

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Datasheet Details

Part number HDAE75F60G
Manufacturer SemiHow
File Size 426.12 KB
Description Fast Recovery Diode
Datasheet download datasheet HDAE75F60G Datasheet

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Full PDF Text Transcription

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HDAE75F60G HDAE75F60G Fast Recovery Diode General Description With excellent performance in reverse recovery time, switching speed and rated current, HDAE75F60G can be utilized with high voltage power switches for voltage limitation and high-frequency current rectification. Features  High Breakdown Voltage  High Speed Switching Dec 2015 VRRM = 600 V IF = 75A trr = 43nS TO-247-2L C A Cathode Anode Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VRRM VR IF(AV) Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectifier Forward Current IFSM Non-Rectifier Peak Surge Current @8.
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