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HDAE30U60G - Ultra Fast Recovery Diode

Description

With excellent performance in reverse recovery time, switching speed and rated current, HDAE30U60G can be utilized with high voltage power switches for voltage limitation and high-frequency current rectification.

Features

  •  Ultrafast Recovery Time  Low Forward Voltage  Low Stored Charge Mar 2016 VRRM = 600 V IF = 30 A trr(Typ) = 33 nS TO-247-2L C A Cathode Anode Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VRRM VR IF(AV) Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectifier Forward Current IFSM Non-Rectifier Peak Surge Current @8.3ms TJ, TSTG Operating and Storage Temperature Range Value 600 30 300 -55 to +150 Electrical Characteristics Symbol VBR VF IR.

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Datasheet Details

Part number HDAE30U60G
Manufacturer SemiHow
File Size 414.54 KB
Description Ultra Fast Recovery Diode
Datasheet download datasheet HDAE30U60G Datasheet

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Full PDF Text Transcription

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HDAE30U60G HDAE30U60G Ultra Fast Recovery Diode General Description With excellent performance in reverse recovery time, switching speed and rated current, HDAE30U60G can be utilized with high voltage power switches for voltage limitation and high-frequency current rectification. Features  Ultrafast Recovery Time  Low Forward Voltage  Low Stored Charge Mar 2016 VRRM = 600 V IF = 30 A trr(Typ) = 33 nS TO-247-2L C A Cathode Anode Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VRRM VR IF(AV) Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectifier Forward Current IFSM Non-Rectifier Peak Surge Current @8.
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