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HDAE60F60G - Fast Recovery Diode

Description

With excellent performance in reverse recovery time, switching speed and rated current, HDAE60F60G can be utilized with high voltage power switches for voltage limitation and high-frequency current rectification.

Features

  •  High Breakdown Voltage  High Speed Switching Dec 2015 VRRM = 600 V IF = 60A trr = 39nS TO-247-2L C A Cathode Anode Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VRRM VR IF(AV) Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectifier Forward Current IFSM Non-Rectifier Peak Surge Current @8.3ms TJ, TSTG Operating and Storage Temperature Range Value 600 60 600 -55 to +150 Unit V A A ℃ Electrical Characteristics Symbol VBR VF IR trr Paramete.

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Datasheet Details

Part number HDAE60F60G
Manufacturer SemiHow
File Size 423.75 KB
Description Fast Recovery Diode
Datasheet download datasheet HDAE60F60G Datasheet

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HDAE60F60G HDAE60F60G Fast Recovery Diode General Description With excellent performance in reverse recovery time, switching speed and rated current, HDAE60F60G can be utilized with high voltage power switches for voltage limitation and high-frequency current rectification. Features  High Breakdown Voltage  High Speed Switching Dec 2015 VRRM = 600 V IF = 60A trr = 39nS TO-247-2L C A Cathode Anode Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VRRM VR IF(AV) Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectifier Forward Current IFSM Non-Rectifier Peak Surge Current @8.
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