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BCU83–SMD
MECHANICAL DATA Dimensions in mm
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
4 .5 1 .6 1 .5
Ideal for high current driver applications requiring low loss devices
4 .2 5 m a x .
2 .5
FEATURES
• LOW VCE(SAT) • HIGH CURRENT • HIGH ENERGY RATING
0 .4 0 0 .5 0 1 .5 3 .0
-
+
*
1 .0 0 .4 0
APPLICATIONS
• ANY HIGH CURRENT DRIVER APPLICATIONS REQUIRING
SOT89
EFFICIENT LOW LOSS DEVICES
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCEO VCBO VEBO IC IC(PK) Ptot Tstg Tj Collector – Emitter voltage Collector – Base voltage Emitter – Base voltage Collector current Peak Collector current Total Dissipation at Tcase = 25°C Storage Temperature Maximum Operating Junction Temperature
Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: magnatec@semelab.co.
BCU83-SMD Datasheet
