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BCU81-SMD - NPN EPITAXIAL PLANAR SILICON TRANSISTOR

Features

  • LOW VCE(SAT).
  • HIGH.

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Datasheet Details

Part number BCU81-SMD
Manufacturer Seme LAB
File Size 88.61 KB
Description NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Datasheet download datasheet BCU81-SMD Datasheet

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BCU83-SMD NPN EPITAXIAL PLANAR SILICON TRANSISTOR

Full PDF Text Transcription

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BCU81-SMD MECHANICAL DATA Dimensions in mm 4 .5 1 .6 1 .5 NPN EPITAXIAL PLANAR SILICON TRANSISTOR Ideal for high current driver applications requiring low loss devices 4 .2 5 m a x . 2 .5 FEATURES • LOW VCE(SAT) • HIGH CURRENT • HIGH ENERGY RATING 0 .4 0 0 .5 0 1 .5 3 .0 1 .0 0 .4 0 APPLICATIONS + * • ANY HIGH CURRENT DRIVER APPLICATIONS REQUIRING EFFICIENT LOW LOSS DEVICES SOT89 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICP PC Tj Tstg Collector – Base voltage Collector – Emitter voltage (IB = 0) Emitter – Base voltage Collector current Collector Current (Pulse) Collector Dissipation (Mounted on Ceramic Board (250mm2 x 0.8mm) Junction Temperature Storage Temperature 30V 10V 6V 3A 5A 500mW 1.3W 150°C –55 to 150°C Magnatec.
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