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w w w . D a t a S h e e t 4 U . c o m
BCU83
MECHANICAL DATA Dimensions in mm
6 .0 5 .0
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Ideal for high current driver applications requiring efficient low loss devices
8 .5
3 .0
1 4 .0
FEATURES
• LOW VCE(SAT) • HIGH CURRENT • HIGH ENERGY RATING
1 .4 5 P IT C H
0 .5 T Y P
APPLICATIONS
4 .7
E C B
0 .5
• Any High Current Driver Applications Requiring Efficient Low Loss Devices.
TO92(EXTENDED)
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IC(PK) Ptot Tstg Tj Collector – Base voltage Collector – Emitter voltage Emitter – Base voltage Collector current Peak Collector current Total Dissipation at Tcase = 25°C Storage Temperature 60V 20V 6V 5A 8A 0.9W –55 to 150°C 150°C
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