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SSE9973 - N-Channel Enhancement Mode MosFET

Description

The SSE9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Low Gate Charge.
  • Simple Drive Requirement REF. A b c D E L4 L5 www. DataSheet. co. kr D Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID@.

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Datasheet Details

Part number SSE9973
Manufacturer SeCoS
File Size 710.58 KB
Description N-Channel Enhancement Mode MosFET
Datasheet download datasheet SSE9973 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSE9973 Elektronische Bauelemente 14A, 60V,RDS(ON)80 m £[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSE9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuit. Features * Low Gate Charge * Simple Drive Requirement REF. A b c D E L4 L5 www.DataSheet.co.kr D Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.
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