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SSE9971 - N-Channel Enhancement Mode MosFET

Description

The SSE9971 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Low On-Resistance.
  • Simple Drive Requirement REF. A b c D E L4 L5 www. DataSheet. co. kr D Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol VDS VGS I.

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Datasheet Details

Part number SSE9971
Manufacturer SeCoS
File Size 709.84 KB
Description N-Channel Enhancement Mode MosFET
Datasheet download datasheet SSE9971 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSE9971 Elektronische Bauelemente 25A, 60V,RDS(ON)36m £[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSE9971 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuit. Features * Low On-Resistance * Simple Drive Requirement REF. A b c D E L4 L5 www.DataSheet.co.kr D Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.
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