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SSE90N06-30P - N-Channel Enhancement Mode MosFET

Description

These miniature surface mount MOSFETs utilize High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

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Datasheet Details

Part number SSE90N06-30P
Manufacturer SeCoS
File Size 226.01 KB
Description N-Channel Enhancement Mode MosFET
Datasheet download datasheet SSE90N06-30P Datasheet

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SSE90N06-30P Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET 87 A, 60 V, RDS(ON) 26.5 m RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. D C TO-220P B R E G A T S TYPICAL APPLICATIONS     Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Thermal impedance copper leadframe TO-220P saves board space. Fast Switch speed. High performance trench technology.
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