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Elektronische Bauelemente
SMS6001
440mA, 60V, RDS(ON) 2Ω N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SMS6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift.
MECHANICAL DATA
Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage ESD Rating: 2KV HBM
APPLICATION
DC-DC converter circuit Load Switch
DEVICE MARKING:
W61*
* = Date Code
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size 7’ inch
SOT-23
A
L
3
Top View
CB
12
KE
1
3 2
D F GH J
REF.
SMS6001 Datasheet
