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SGM2310B - N-Channel MOSFET

General Description

The SGM2310B utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

SGM2310B is universally used for all commercial-industrial applications.

Key Features

  • Simple Drive Requirement.
  • Small Package Outline.

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Other Datasheets by SeCoS Halbleitertechnologie GmbH

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SGM2310B 2.7A , 60V , RDS(ON) 100 m N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SGM2310B utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2310B is universally used for all commercial-industrial applications. FEATURES  Simple Drive Requirement  Small Package Outline MARKING K F 2310B   = Date code SOT-89 A Top View C B 4 L E 123 D GH REF. A B C D E F Millimeter Min. Max. 4.40 4.60 4.05 4.25 2.40 2.60 1.40 1.60 3.00 REF. 0.40 0.52 1.Gate 2.Drain 3.Source J REF. G H J K L Millimeter Min. Max. -0.89 1.20 0.35 0.41 0.70 0.80 1.50 REF.