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SGM2308 - N-Channel MOSFET

General Description

The SGM2308 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SGM2308 is universally used for all commercialindustrial surface mount applications.

Key Features

  • Simple Drive Requirement.
  • Small Package Outline D G S SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @4.5V Continuous Drain Current,3 VGS @4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Fact.

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Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
SGM2301 P-Channel MOSFET
SGM2305A P-Channel MOSFET
SGM2306 N-Channel MOSFET
SGM2306A N-Channel MOSFET
SGM2310 N-Channel MOSFET
SGM2310A N-Channel MOSFET
SGM2310B N-Channel MOSFET
SGM0410 N-Channel Enhancement Mode Power MOSFET
SGM0410-C N-Channel Enhancement Mode Power MOSFET
SGM0410S N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SGM2308 3A, 60V,RDS(ON) 160m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SGM2308 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2308 is universally used for all commercialindustrial surface mount applications. Features * Simple Drive Requirement * Small Package Outline D G S SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @4.