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SGM2310A - N-Channel MOSFET

General Description

The SGM2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SGM2310A is universally used for all commercial-industrial applications.

Key Features

  • Simple drive requirement Super high density cell design for extremely low RDS(ON).

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Other Datasheets by SeCoS Halbleitertechnologie GmbH

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SGM2310A 5 A, 60 V, RDS(ON) 115 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 DESCRIPTION The SGM2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2310A is universally used for all commercial-industrial applications. FEATURES Simple drive requirement Super high density cell design for extremely low RDS(ON) MARKING D 24 A Top View C B KL E 123 D F GH 4 J REF. A B C D E F Millimeter Min. Max. 4.40 4.60 4.05 4.25 2.40 2.60 1.40 1.60 3.00 REF. 0.40 0.52 REF. G H J K L Millimeter Min. Max. -0.89 1.20 0.35 0.41 0.70 0.80 1.50 REF.