SUM1960NE - N-channel MOSFET

Datasheet Summary

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-363 saves board space Fast switching speed High performance trench technology.

SeCoS Halbleitertechnologie

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Datasheet Details

Part number	SUM1960NE
Manufacturer	SeCoS Halbleitertechnologie
File Size	75.26 KB
Description	N-channel MOSFET
Datasheet	SUM1960NE Datasheet
Additional preview pages of the SUM1960NE datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SUM1960NE 0.32A , 60V , RDS(ON) 2 Ω N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-363 saves board space Fast switching speed High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

Published: Aug 12, 2014 |