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SUM110N04-03
Vishay Siliconix
N-Channel 40-V (D-S) 200_C MOSFET
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
0.0028 @ VGS = 10 V
ID (A)
110 a
D TrenchFETr Power MOSFET D 200_C Junction Temperature D New Package with Low Thermal Resistance
APPLICATIONS
D Automotive - ABS - 12-V EPS - Motor Drives
D
TO-263
G
G
D S S
Top View Ordering Information: SUM110N04-03N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
40 "20 110a 110a 440 70 211 437.5c 3.