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SUM2153
Elektronische Bauelemente 0.81A , 20V , RDS(ON) 310 mΩ N-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
A E
SOT-363
L
MECHANICAL DATA
Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage
F DG
B
C K
H J
APPLICATION
DC-DC converter circuit Load Switch
REF. A B C D E F
MARKING
53
Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.10 1.50 0.10 0.35
REF. G H J K L
Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 8° 0.650 TYP.