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C3820 - NPN Epitaxial Planar Type Silicon Transistor

Datasheet Summary

Features

  • Adoption of FBET and MBIT processes.
  • High DC current gain (hFE=800 to 3200).
  • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
  • High VEBO (VEBO≥15V).
  • Small Cob (Cob=2.0pF typ). Package Dimensions unit:mm 2033 [2SC3820] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage.

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Datasheet Details

Part number C3820
Manufacturer Sanyo
File Size 85.63 KB
Description NPN Epitaxial Planar Type Silicon Transistor
Datasheet download datasheet C3820 Datasheet
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Full PDF Text Transcription

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Ordering number:EN2544B NPN Epitaxial Planar Type Silicon Transistor 2SC3820 High hFE, AF Amplifier Applications Applications · Drivers, muting circuits. Features · Adoption of FBET and MBIT processes. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). · Small Cob (Cob=2.0pF typ).
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