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C3811 - Silicon NPN Transistor

Datasheet Summary

Features

  • s.
  • Low collector-emitter saturation voltage VCE(sat) 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 0.7±0.2 12.9±0.5 0.7±0.1.
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 40 V 0.45+.
  • 00..115 0.45+.
  • 00..115 e Collector-emitter voltage (E-B short) VCES 40 V c type) Emitter-base voltage (Collector open) VEBO 5 V n d ge. ed Collector current IC 100 mA 2.3±0.2 le sta ntinu Peak collector current I.

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Datasheet Details

Part number C3811
Manufacturer Panasonic
File Size 221.27 KB
Description Silicon NPN Transistor
Datasheet download datasheet C3811 Datasheet
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Full PDF Text Transcription

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Transistors 2SC3811 Silicon NPN epitaxial planar type For high-speed switching ■ Features • Low collector-emitter saturation voltage VCE(sat) 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 0.7±0.2 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 40 V 0.45+–00..115 0.45+–00..115 e Collector-emitter voltage (E-B short) VCES 40 V c type) Emitter-base voltage (Collector open) VEBO 5 V n d ge. ed Collector current IC 100 mA 2.3±0.2 le sta ntinu Peak collector current ICP 300 mA a e cyc isco Collector power dissipation PC 400 mW life d, d Junction temperature Tj 150 °C n u duct type Storage temperature Tstg −55 to +150 °C 2.5+–00..26 2.5+–00..
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